q?v~zy??q?v?_rc]q{??qcabgq HCP60R150T super junction mosfet ? very low fom (r ds(on) xq g ) ? extremely low switching loss ? excellent stability and uniformity ? 100% avalanche tested to-220 parameter value unit bv dss @t j,max 650 v i d 22 a r ds(on), max 0.15
qg ,typ 41 nc key parameters package & internal circuit HCP60R150T 600v n-channel super junction mosfet features application ? switch mode power supply (smps) ? uninterruptible power supply (ups) ? power factor correction (pfc) ? tv power & led lighting power thermal resistance characteristics symbol parameter typ. max. units r jc junction-to-case -- 0.65 e /w r cs case-to-sink 0.5 -- r ja junction-to-ambient -- 62.5 symbol parameter value units v dss drain-source voltage 600 v v gs gate-source voltage 30 v i d drain current ? continuous (t c = 25 e ) 22.0 a drain current ? continuous (t c = 100 e ) 13.9 a i dm drain current ? pulsed (note 1) 60.0 a e as single pulsed avalanche energy (note 2) 650 mj p d power dissipation (t c = 25 e ) 192 w t j , t stg operating and storage temperature range -55 to +150 e t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 260 e absolute maximum ratings t c =25 e unless otherwise specified jan 2016 d g s
q?v~zy??q?v?_rc]q{??qcabgq HCP60R150T super junction mosfet electrical characteristics t j =25 q c unless otherwise specified symbol parameter test conditions min typ max units i s continuous source-drain diode forward current -- -- 22 a i sm pulsed source-drain diode forward current -- -- 60 v sd source-drain diode forward voltage i s = 22 a, v gs = 0 v -- -- 1.2 v trr reverse recovery time i s = 22 a, v gs = 0 v di f /dt = 100 a/ v -- 440 -- qrr reverse recovery charge -- 5 -- & bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 3 600 -- -- v i dss zero gate voltage drain current v ds = 600 v, v gs = 0 v -- -- 10 3 v ds = 480 v, t j = 125 e -- -- 100 3 i gss gate-body leakage current v gs = 30 v, v ds = 0 v -- -- 100 2 off characteristics c iss input capacitance v ds = 50 v, v gs = 0 v, f = 1.0 mhz -- 1600 2100 ? c oss output capacitance -- 225 295 ? c rss reverse transfer capacitance -- 14 18.5 ? dynamic characteristics t d(on) turn-on time v ds = 300 v, i d = 22 a, r g = 25 ? -- 48 104 t r turn-on rise time -- 108 220 t d(off) turn-off delay time -- 176 360 t f turn-off fall time -- 50 108 q g total gate charge v ds = 480 v, i d = 22 a v gs = 10 v -- 41 53 nc q gs gate-source charge -- 8 -- nc q gd gate-drain charge -- 15 -- nc switching characteristics source-drain diode maximum ratings and characteristics notes ; 1. repetitive rating : pulse width limited by maximum junction temperature 2. i as =6a, v dd =50v, r g =25 : , starting t j =25 q c 3. pulse test : pulse width ? v ' x w \ & \ f o h ? on characteristics v gs gate threshold voltage v ds = v gs , i d = 250 3 2.0 -- 4.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 11 a -- 0.13 0.15 ? g fs forward transconductance v ds = 10, i d = 11 a -- 18.8 -- s
q?v~zy??q?v?_rc]q{??qcabgq HCP60R150T super junction mosfet typical characteristics figure 1. on region characteristics figure 2. transfer characteristics figure 3. on resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 5. capacitance characteristics figur e 6. gate charge characteristics
q?v~zy??q?v?_rc]q{??qcabgq HCP60R150T super junction mosfet typical characteristics (continued) figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation vs temperature figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature figure 11. transient thermal response curve t 2 t 1 p dm -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2
note : 1. v gs = 0 v 2. i d = 250 p a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] 25 50 75 100 125 150 0 4 8 12 16 20 24 i d , drain current [a] t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 * note : 1. v gs = 10 v 2. i d = 11 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z t jc (t) = 0.65 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z t jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z t jc (t), thermal response t 1 , square wave pulse duration [sec] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 10 p s 100 ms dc 10 ms 1 ms 100 p s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v]
q?v~zy??q?v?_rc]q{??qcabgq HCP60R150T super junction mosfet fig 12. gate charge test circuit & waveform fig 13. resistive switching test circuit & waveforms fig 14. unclamped inductive switching test circuit & waveforms e as =l l i as 2 ---- 2 1 -------------------- bv dss -- v dd bv dss v in v ds 10% 90% t d(on) t r t on t off t d(off) t f charge v gs 10v q g q gs q gd v dd v ds bv dss t p v dd i as v ds (t) i d (t) time v dd ( 0.5 rated v ds ) 10v v ds r l dut r g 3ma v gs dut v ds 300nf .
200nf 12v same type as dut 10v dut r g l i d
q?v~zy??q?v?_rc]q{??qcabgq HCP60R150T super junction mosfet fig 15. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i s controlled by pulse period v dd l i s 10v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward voltage drop v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period --------------------------
q?v~zy??q?v?_rc]q{??qcabgq HCP60R150T super junction mosfet package dimension 9.19 0.20 3 0.20 9.90 0.20 2.80 0.20 15.70 0.20 13.08 0.20 3.02 0.20 2.54typ 6.50 0.20 0.80 0.20 1.27 0.20 1.52 0.20 1.30 0.20 4.50 0.20 0.50 0.20 2.40 0.20 2.54typ { v t y y w g
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